Twinning on Pyramidal Planes in hcp Crystals Determined together with Other Defects by X-ray Line Profile Analysis

 

 

Levente Balogh, Géza Tichy and Tamás Ungára)

 

Department of Materials Physics, Institute of Physics of the Eötvös University Budapest, P.O.Box 32, H-1518 Budapest, Hungary

 

J. Appl. Cryst., 42 (2009) 580-591

 

Abstract

 

A systematic procedure is developed to evaluate the frequency of {10.1}<10.> and {11.2}<11.> compressive twins and {10.2}<10.> and {11.1}<.6> tensile twins together with dislocation densities, active slip systems and crystallite size in hexagonal close packed metals. The effect of pyramidal twinning on X-ray line broadening in hcp metals is fundamentally different from the effect of twinning on close packed planes in fcc crystals. Therfore, the usual theoretical descriptions developed previously for latter case cannot be used for pyramidal twinning in hcp crystals. The profile functions of sub-profiles for this type of twinning are derived to be the sum of a symmetrical and an antisymmetrical Lorentzian function. Sub-profiles properties are parametrized and the parameter files are incorporated into the convolutional multiple whole profile (CMWP) procedure. The extended eCMWP procedure, is applied to determine pyramidal twin frequencies together with dislocation densities, active slip systems and crystallite size in Mg deformed at different temperatures, in commertial purity Ti deformed at high temperature and in high-purity Ti deformed at room temperature.

 

 

 

 

Data tables for {10.1}<10.> and {11.2}<11.> compressive twins and {10.2}<10.> and {11.1}<.6> tensile twins in Ti

 

 

 

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Stacking Faults and Twin Boundaries in fcc Crystals Determined by X-ray Diffraction Profile Analysis

 

 

Levente Balogh, Gábor Ribárik and Tamás Ungár

 

Department of Materials Physics, Institute of Physics of the Eötvös University Budapest, P.O.Box 32, H-1518 Budapest, Hungary

 

 

 

Balogh, L., Ribárik, G. & Ungár, T. (2006). J. Appl. Phys. 100, 023512

 

 

 

Data tables for intrinsic, extrinsic stacking faults and twin faults in Cu

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